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Growth of metamorphic InGaP layers on GaAs substrates
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2013.9.9
  • 页码：141-144
  • 相关项目：微纳系统材料、制造与器件物理
作者： Yan, J. Y.|Gong, Q.|Yue, L.|Liu, Q. B.|Cheng, R. H.|Cao, C. F.|Wang, Y.|Wang, S. M.|
同期刊论文项目
微纳系统材料、制造与器件物理
期刊论文 80 会议论文 27 专利 30
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