中文摘要：

制备了用过渡金属氧化物V2O5修饰Al源、 漏电极的C60/Pentacene双层异质结有机场效应管. 该构型器件与未修饰器件相比, 呈现出典型的双极型晶体管传输特性. 电子迁移率和空穴迁移率分别达到8.6× 10-2 cm2/V·s-1和6.4× 10-2 cm2/V·s-1, 阈值电压分别为25 V和-25 V. 器件性能改善的原因主要是由于插入V2O5修饰层后, 可以明显降低Al电极与Pentacene之间的接触势垒, 提高空穴的有效注入, 从而使电子和空穴的注入接近平衡. 研究表明, 采用V2O5修饰电极方法, 是制备低成本、 高性能的双极型有机场效应管并实现其商业应用的有效途径.

英文摘要：

C60/Pentacene-based ambipolar organic heterostructure field-effect transistors （AOFETs） with Al source-drain （S/D） electrodes modified by inserting a transition metal oxide （V2O5） layer are fabricated. Compared with the device without V2O5 modified layer, the modified device shows good ambipolar characteristics with a hole mobility of 8.6× 10-2 cm2/V·s-1 and an electron mobility of 6.4× 10-2 cm2/V·s-1, and threshold voltages of 25 and -25 V, respectively. These performance improvements are ascribed to the presence of V2O5 layer at the Pentacene/Al interface which significantly reduces the source/drain contact resistance, increases the holes injection and makes electronic and hole injection close to balance. This result indicates that modified electrodes by V2O5 film is an effective approach to fabricating low cost and high performance AOFETs for realizing commercial applications.