中文摘要：

<正>We investigated the properties of C60-based organic field-enect transistors（OFETs）（?） a pentacene passivation layer inserted between the C60 active layer and the gate dielectric.After modification of the pentacene passivation layer,the performance of the devices was considerably improved compared to C60-based OFETs with only a PMMA dielectric.The peak field-effect mobility was up to 1.01 cm2/（V·s） and the on/off ratio shifted to 104.This result indicates that using a pentacene passivation layer is an effective way to improve the performance of N-type OFETs.

英文摘要：

We investigated the properties of C_（60）-based organic field-enect transistors（OFETs）（？） a pentacene passivation layer inserted between the C_（60） active layer and the gate dielectric.After modification of the pentacene passivation layer,the performance of the devices was considerably improved compared to C_（60）-based OFETs with only a PMMA dielectric.The peak field-effect mobility was up to 1.01 cm~2/（V·s） and the on/off ratio shifted to 10~4.This result indicates that using a pentacene passivation layer is an effective way to improve the performance of N-type OFETs.