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碳纤维增强Si-C-N陶瓷基复合材料的氧化行为
  • 期刊名称:硅酸盐学报,2008,36(11):66-72 (EI) EI收录
  • 时间:0
  • 分类:TB332[一般工业技术—材料科学与工程]
  • 作者机构:[1]西北工业大学,超高温结构复合材料国家重点实验室,西安710072
  • 相关基金:国家自然科学基金(50772089);长江学者和创新团队发展计划;高等学校学科创新引智计划(B08040)资助项目.
  • 相关项目:C/SiCN材料的高温热稳定性和力学性能
中文摘要:

采用化学气相浸渗(chemical vapor infiltration,CVI)法制备了以热解碳为界面的碳纤维增强碳氮化硅陶瓷基(carbon fiber reinforced silicon carbonitride ceramic,C/Si-C-N)复合材料。用热重法研究了无涂层C/Si-C-N在空气环境中的氧化行为。研究表明:由950℃CVI沉积的Si-C-N基体所制备的C/Si-C-N复合材料的氧化行为与碳纤维增强SiC陶瓷基(carbon fiber reinforced silicon carbide ceramic,C/SiC)复合材料的完全不同。在600~1200℃,C/Si-C-N的氧化速率随温度的升高而持续增加,其抗氧化能力在600℃明显高于C/SiC复合材料;在900℃,抗氧化能力与C/SiC复合材料基本相当;在1200℃,抗氧化能力则低于C/SiC复合材料。C/Si-C-N复合材料所表现出来的氧化行为主要与Si-C-N基体较低的热膨胀系数有关。

英文摘要:

Carbon fiber reinforced silicon carbonitride matrix composite (C/SiC-N) with a pyrolytic carbon interlayer was fabricated by a chemical vapor infiltration (CVI) technique. The Si-C-N matrix was deposited by CVI at 950 ℃. The oxidation behaviors of C/Si-C-N were investigated in air using thermogravimetry. The results indicate that the oxidation behavior of C/Si-C-N is completely different from that of carbon fiber reinforced SiC composite (C/SiC). The oxidation rate of C/Si-C-N increases continuously with the increase of temperature from 600 to 1 200℃. The oxidation resistance of C/Si-C-N is similar to that of C/SiC at 900℃, obviously higher than that of C/SiC at 600 ℃, and is lower than that of C/SiC at 1 200℃. These oxidation behaviors are mainly related to the low coefficient of thermal expansion of the Si-C-N matrix.

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