中文摘要：

采用化学气相沉积法制备了块体非晶态Si-C-N陶瓷.用TG/DSC、XRD、SEM和TEM等技术方法研究了所制备的Si-C-N陶瓷的热行为.研究结果表明：在热处理过程中,非晶态Si-C-N首先发生相分离,分离后的一种相呈颗粒状;β-SiC就是从这种颗粒状的分离相中形成.在热处理条件下,非晶Si-C-N的晶化温度约为1200℃;在加热速率为20℃/min的连续加热条件下,其晶化温度为1372.6℃.β-SiC在1200℃首先形成,β-Si3N4和α-SiC则在1500℃形成.在扫描电镜观察中,热处理后的Si-C-N中出现一种类似于层状的组织,这种组织的晶化程度较高.

英文摘要：

The amorphous bulk Si-C-N ceramic was prepared by chemical vapor deposition（CVD）.The thermal be-haviors of as-prepared Si-C-N ceramic were investigated using TG/DSC,XRD,SEM and TEM.The phase separation firstly occurred in amorphous Si-C-N during the heat treatment,and one of separating phases appeared granular.β-SiC was formed in the granular separating phase.The amorphous Si-C-N began to crystallize at about 1200℃ when the ceramic exposed to the heat treatment.The crystallization temperature was about 1372.6℃,which was determined by DSC under the condition of continuous heating at a heating rate of 20℃/min.β-SiC was found at 1200℃,while β-Si3N4 and α-SiC were formed at about 1500℃.A laminate-like structure appears in the heat-treated Si-C-N.This kind of structure was proved to be the highly crystallized Si-C-N.