中文摘要：

利用离子注入法在Si（001）衬底上先后注入了In^＋和As^-,注入能量分别为210，150keV，注入剂量分别为6．2×10^16，8．6×10^16cm，然后对样品经过退火处理制备出了量子点材料（为了避免沟道效应，注入角度选择为7°）．用透射电子显微镜（TEM）和高分辨透射电子显微镜（HRTEM）观察了退火后量子点截面像，发现量子点的平均尺寸大小随退火温度和时间增加而增大．

英文摘要：

Silica （001） slice was implanted by In^＋ and As^- at 210 and 150 keV with doses of 6.2 × 10^16 and 8.6× 10^16 cm^-2 respectively. Then the quantum dots material was fabricated with subsequently annealing treatment（the implantation angle was 7° to avoid channel effect）. The implanted subsequent annealed samples were observed using a transmission electron microscope （TEM） and a high-resolution transmission electron microscope （HRTEM）. The TEM images show that the average size of quantum dots increases with the increasing temperature and time of annealing