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Dislocation cross-slip in GaN single crystals under nanoindentation
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2011.5.5
  • 页码：-
  • 相关项目：掺稀土GaN厚膜晶体衬底的HVPE生长、性能和发光机理研究
作者： Yang, H.|Xu, K.|Gong, X. J.|Wang, J. F.|Fan, Y. M.|Liu, J. Q.|Zeng, X. H.|Ren, G. Q.|Zhou, T. F.|
同期刊论文项目
掺稀土GaN厚膜晶体衬底的HVPE生长、性能和发光机理研究
期刊论文 12 专利 3
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