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Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2013.6.6
  • 页码：43-48
  • 相关项目：掺稀土GaN厚膜晶体衬底的HVPE生长、性能和发光机理研究
作者： H. Yang|K. Xu|G.Q. Ren|J.F. Wang|Y. Xu|X.H. Zeng|J.C. Zhang|D.M. Cai|T.F. Zhou|
同期刊论文项目
掺稀土GaN厚膜晶体衬底的HVPE生长、性能和发光机理研究
期刊论文 12 专利 3
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