中文摘要：

采用离子注入的方法在氮化铝（AlN）薄膜中实现Er3＋和Pr3＋的共掺杂,以阴极荧光光谱仪为主要表征手段,对其发光特性进行研究.对于Er3＋单掺杂的AlN薄膜,在410nm和480nm可以观察到Er3＋较强的发光峰,在537nm、560nm、771nm和819nm可观察到Er3＋的较弱的发光峰;对于Pr3＋单掺杂的AlN薄膜,Pr3＋的最强发光峰位于528nm,在657nm和675nm可以观察到Pr3＋的较弱的发光峰;而对于Er3＋和Pr3＋共掺杂的AlN薄膜,在494nm观察到与Pr3＋相关的新跃迁峰.根据实验现象,对AlN薄膜中Er3＋和Pr3＋之间的能量传递机制进行了深入分析,结果表明Er3＋的4F7/2→4I15/2能级跃迁与Pr3＋的3P0→3H4能级跃迁之间发生了共振能量传递,从而使Pr3＋产生了494nm新的发光峰.

英文摘要：

Er3＋and Pr3＋co-doped AlN thin films were prepared by ion implantation,luminescence properties were characterized via cathodoluminescence spectrometer.For Er3＋doped AlN thin films,410 and 480nm peaks with higher intensity were observed,and there were other weaker peaks observed at537,560,771,and 819 nm.For Pr3＋doped AlN thin films,528 nm peak with higher intensity was observed,and there were other weaker peaks observed at 657 and 675nm.However,for Er3＋ and Pr3＋co-doped AlN thin films,a new luminescence peak at 494 nm was observed and was attributed to Pr3＋.According to the experimental results,the energy transfer mechanism between Er3＋and Pr3＋in AlN thin films were investigated,the results show that resonant energy transfer exists between 4F7/2→4I15/2of Er3＋and 3P0→3H4 of Pr3＋,which results in the new 494 nm luminescence peak of Pr3＋