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A Study on the Improved Programming Characteristics of Flash Memory with Si3N4/SiO2 Stacked Tunnelin
  • ISSN号：0026-2714
  • 期刊名称：Microelectronics Reliability
  • 时间：0
  • 页码：912-915
  • 相关项目：小尺寸低压高速长保持力电荷陷阱型悬浮栅存储器的研究
作者： L. Liu|J. P. Xu|L. L. Chen|P. T. Lai|
同期刊论文项目
小尺寸低压高速长保持力电荷陷阱型悬浮栅存储器的研究
期刊论文 14 会议论文 5
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