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Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory A
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：033501-033504
  • 相关项目：小尺寸低压高速长保持力电荷陷阱型悬浮栅存储器的研究
作者： L. Liu|J. P. Xu|F. Ji|J. X. Chen|P. T. Lai|
同期刊论文项目
小尺寸低压高速长保持力电荷陷阱型悬浮栅存储器的研究
期刊论文 14 会议论文 5
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