中文摘要：

采用反应溅射法制备以GdO。或Gd0N为存储层的MONOS（Metal—Oxide—Nitride—Oxide—Si）电容存储器，研究了GdO。中氧含量以及掺氮对MONOS存储器存储特性的影响。实验结果表明，含氧气氛中制备的GdO其氧空位（电荷陷阱）较少，且界面处存在较多Gd—Si键，导致界面态密度增加，因而存储特性欠佳；引入氮至GdO中可诱导出大量的深能级电子陷阱，并能提高介电常数、减少界面缺陷，因此GdON样品表现出好的存储特性：较大的存储窗口（±13v／1s的编程／擦除电压下，存储窗口4．1V）、高的工作速度、好的保持特性以及优良的疲劳特性（105循环编程／擦除后，存储窗口几乎不变）。

英文摘要：

The MONOS （Metal-Oxide-Nitride-Oxide-Si） capacitor memory with GdOx or GdON as charge storage layer （CSL） is fabricated by the reactive sputtering method, and the in- fluences of different oxygen content and nitrogen incorporation in CSL on the MONOS memory characteristics are investigated. Experimental resuhs show that GdO CSL prepared in oxygen-rich ambient has less oxygen vacancies （charge traps） and many Gd-Si bonds near the interface, lead- ing to its poor interface quality and memory characteristics. The incorporation of nitrogen in GdO CSL induces a large number of deep-level electron traps, increases its dielectric constant and de- creases the interface traps, so that the sample with GdON as CSL exhibits excellent memory characteristics, i.e. a large memory window of 4.1 V （at ± 13 V, 1 s）, high operating speed, good retention properties and the excellent endurance properties （after 10SP/E cycles, the memo- ry window almost remains unchanged）.