中文摘要：

居里温度与载流子浓度反铁磁性交换作用有着密切联系,定量分析反铁磁性交换作用对p型及n型GaAs材料的居里温度的影响,计算证明,反铁磁性交换作用对p型和n型掺杂的GaAs居里温度的影响有着本质的区别。p型半导体材料的居里温度仅仅与反铁磁性交换作用有关,而与掺杂浓度无关;对n型半导体居里温度与反铁磁性交换作用和掺杂浓度都有关,而且高掺杂浓度下居里温度比低掺杂浓度下居里温度低。

英文摘要：

GaAs Curie temperature depends on carrier concentration and anti-ferromagnetic exchange interaction.This paper quantitatively analyzes the Influence of anti-ferromagnetic exchange interaction on the Curie temperature of p,n-type doped GaAs.Calculations prove that influence of anti-ferromagnetic exchange interaction on the Curie temperature of p,n-type doped GaAs is essentially different：p-type semiconductor materials,the Curie temperature is only with the anti-ferromagnetic exchange interaction,but with doping concentration has nothing to do;n-type semiconductor,the Curie temperature depends on the anti-ferromagnetic exchange interaction and doping concentration,and the high doping concentration the Curie temperature than low doping concentration is low.