中文摘要：

采用布里奇曼法生长出了化合物半导体GaTe,并对其晶体结构进行研究。利用X射线衍射仪对GaTe粉末和块体试样分别进行测试,确定了其晶体结构。采用透射电子显微镜对二维薄膜GaTe及二维纳米层GaTe进行观测,并结合晶体定向仪对GaTe解理面进行了定向分析。结果表明,二维薄膜GaTe及二维纳米层GaTe分别对应单斜和六方两种不同的晶体结构,并对应不同的解理面。

英文摘要：

The compound semiconductor GaTe was grown by Bridgman method. The crystal structure of GaTe powder and bulk were charactereized by XRD,Ga Te thin film and two-dimensional nano layer were analyzed by TEM,and the cleavage surface of GaTe was determined by crystal orientation instrument.The results show that the structure of GaTe thin film and two-dimensional nano layer belong to monoclinic and hexagon,respectively,which correspond to different cleavage surface.