基于微观相场模型,通过分析Ni75AlxV25-x合金在沉淀过程中D022(Ni3V)相沿[001]方向形成的有序畴界面的界面结构、界面迁移及界面成分,研究界面结构对界面迁移特征和溶质偏聚的影响。研究表明:D022相沿[100]方向形成4种有序畴界,界面的迁移性与界面结构有关,除具有L12相的局部特征的界面(001)//(002)之外,其余3种界面都可以迁移;在界面的迁移过程中,V原子跃迁至最近邻的Ni位置并置换Ni原子,反之亦然,即处在最近邻的Ni原子和V原子发生位置交换而导致界面迁移;在迁移过程中,原子的跃迁行为具有位置选择性,每种可迁移界面都按照特定的原子跃迁模式进行迁移;原子在跃迁过程中选择最优化的路径使得界面发生迁移,原子跃迁过程中的位置选择性使得界面在迁移前、后的结构保持不变;合金元素在界面处具有不同的贫化和偏聚倾向,在所有的界面处,Ni偏聚而V贫化,Al在界面(001)//(001)·1/2[100]处贫化在其他界面处偏聚;同种合金元素在不同界面处的偏聚和贫化程度不同。
Based on the microscopic phase-field model, ordered domain interfaces formed between D022 (Ni3V) phases along [001] direction in Ni75AlxV25-x alloys were simulated, and the effects of atomic structure on the migration characteristic and solute segregation of interfaces were studied. It is found that the migration ability is related to the atomic structure of interfaces, and three kinds of interfaces can migrate except the interface (001)//(002) which has the characteristic of L12 (Ni3Al) structure. V atoms jump to the nearest neighbor site and substitute for Ni, and vice versa. Because of the site selectivity behaviors of jumping atoms, the number of jumping atoms during the migration is the least and the jumping distance of atoms is the shortest among all possible modes, and the atomic structures of interfaces are unchanged before and after the migration. The preferences and degree of segregation or depletion of alloy elements are also related to the atomic structure of interface.