中文摘要：

研究了一种大功率低功耗p^＋（SiGeC）-n^--n^＋异质结二极管结构，分析了Ge、C含量对器件正向通态特性的影响。结果表明：与常规的sip—i—n二极管相比，在正向电流密度不超过1000A／cm^2情况下，p^＋（SiGeC）-n^--n^＋二极管的正向压降有明显的降低。当电流密度为10A／cm^2时，Sip—i—n二极管的压降为0．655V，而SiGeC异质结二极管的压降只有0．525V，大大降低了器件的通态功耗。在相同正向电流密度的条件下，SiGeC异质结二极管在n^-区存储的载流子比Si二极管的减少了1个数量级以上，这导致前者的关断时间远小于后者。

英文摘要：

A high-power low-loss SiGeC/Si hetero junction diode is presented in this paper. The effects of carbon and germanium content on the forward characteristics of p^＋ （SiGeC）-n^--n^＋ diodes are analyzed. The results indicate that the forward voltage drop of p^＋ （SiGeC）-n^--n^＋ diodes is much lower than that of Si p-i-n diodes when the operating current densities don＇t exceed 1000 Amperes per cmz, which is very good for getting lower operating loss. The forward voltage drop of Si diode is 0. 655 V whereas that of SiGeC heterojunction diode is only 0. 525 V at operating current density of 10 A/cm^2. In addition, the carries density of SiGeC heterojunction diode is lower over one order of magnitude than the carries density of Si diode at the same operating current density which causes the former has shorter turn-off time.