中文摘要：

微电子领域中的铜互连工艺需要沉积一层连续且保形好的铜籽晶层,随着集成电路中特征尺寸的减小及沟槽深宽比的增加,传统的热沉积工艺难以满足其将来的制作要求。本文介绍了使用新的强还原剂前驱体沉积铜金属工艺的研究进展,重点综述了利用氢气等离子体辅助原子层沉积铜薄膜工艺的研究现状,概述了应用各类铜前驱体进行铜薄膜沉积的参数及所制备铜薄膜的性能,总结了各工艺的优缺点。

英文摘要：

The latest advance in low temperature growth of copper thin films by atomic layer deposition（ ALD）,infabrication of copper interconnects of integrated circuit chips with decreasing feature size and increasing aspect ratio,was tentatively discussed. The discussion focused on： i） the novel technologies in deposition of copper films with strong reductant precursor by hydrogen plasma enhanced atomic layer deposition（ PEALD）; ii） the strengths and weaknesses of the ALD Cu-film growth techniques with different precursors; iii） the positive impact of the plasma on the growth of copper film,such as lowering the growth temperature via reducing the hydrogenation reactivity of the ligands and improving the uniformity of the copper films by restricting copper atom conglomeration.The extensive efforts in searching for the new Cu precursors,with strong low-temperature reactivity and with high saturated vapor pressure to improve the uniformity of PEALD Cu-film,were also briefly discussed.