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中文摘要：
本文采用水热法,在ZnO中添加In2O3为前驱物,3mol/L KOH作矿化剂,温度430℃,填充度35%,反应24h,制备了掺In的ZnO晶体。未掺杂In2O3合成的纯ZnO晶体呈六棱锥状,显露负极面-c{000 1-}、六棱锥面＋p{10 1-1}和-p{10 1-1-},一般不显露{0001}面。前驱物中掺杂In2O3所合成的ZnO晶体呈六角片状,直径约为5~20μm,大面积显露{0001}面,另外还显露正锥面＋p{10 1-1}、负锥面-p{10 1-1-}和负极面-c{000 1-}。由此可见In掺杂可以明显的改变晶体的形态,使c轴极性快速生长趋向得到明显改善,有利于降低晶体生长缺陷。当采用ZnO晶片为籽晶时,通过水热反应在晶片上生长了一层掺In的ZnO薄膜,通过Hall参数测量得到晶体膜层的电子迁移率约为22cm^2/（V.s）,载流子浓度约为2×10^20cm^-3,具有良好的导电性,同时也说明In可以微量掺入氧化锌晶体。
英文摘要：
In this paper,In-doped ZnO crystals were synthesized by hydrothermal method with 3mol/L KOH as mineralizer,the fill factor was 35%,reaction temperature of 430℃,and time of 24h.The shape of undoped ZnO was hexagonal cone.The negative polar-c{0001-},positive pyramidal face ＋p{101-1 },and negative pyramidal face-p{101-1-} were exposed and the face ＋c{0001} was not usually exposed.When the ZnO mixed with In2O3 were used as precursor,the In-doped ZnO had a shape of hexagonal slice with a diameter of 5-20 μm.The positive polar face ＋c{0001} can expose more area.The negative polar-c{0001-},positive pyramidal face ＋p{1011 } and negative pyramidal face-p{101-1-} was also exposed.The shape of In-doped ZnO were obviously improved,the rate of growth along c-axic was weakened apparently and the defects may be reduced.When the substrate was ZnO,In-doped ZnO film was fabricated by hydrothermal method.The σ and n0 of the In-doped ZnO film was about 22cm^2/（V·s）,2×10^20cm^-3,respectively by Hall measurement.It also shows In ions can micro-dope into ZnO.
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