采用水热法,在温度430℃,填充度35%,矿化剂为3mol·L^-1 KOH,前驱物为添加适量的FeCl2·6H2O的Zn(OH)2,反应时间24h,合成了Zn1-xFexO和Zn1-xFexO:Cu稀磁半导体晶体.当在Zn(OH)2中添加一定量的FeCl2·6H2O为前驱物,水热反应产物为掺杂Fe的Zn1-xFexO多种形态晶体混合物,其个体较大的晶体中的Fe原子百分比含量为0.49%-0.52%.采用超导量子干涉磁强计测量了材料的磁性,晶体的磁化强度随温度下降而减小.在前驱物中同时加入适量比例的Cu化合物,合成了共掺杂Cu的Zn1-xFexO:Cux和Zn1-xFexO相比,其室温下的磁化强度有明显的提高,且在室温下具有铁磁性.
Diluted magnetic semiconductor Zn1-xFexO and Zn1-xFexO : Cu crystals were synthesized by hydrothermal method with 3molL^-1 KOH as mineralizer, with 35 % fill factor, under the reaction temperature of 430℃ for 24h. When Zn(OH)2 doped with FeCl2·6H2O was used as precursor, different shapes of Fe doped ZnO crystals were synthesized, of which the atomic percentage of Fe in the bigger crystals were 0.49%-0.52%. The magnetization of the crystals lowered with increasing temperature, a superconducting quantum interference device (SQUID) was used for measuring magnetism. Compared with Zn1-xFexO crystals the magnetization of Zn1-xFexO : Cu crystals doped with Cu increased obviously in the high temperature region, and at room temperature they were ferromagnetic.