采用水热法,KOH作矿化剂,在ZnO前驱物中添加适量的CoCl2.6H2O,FeCl2.4 H2O,NiCl2.6H2O,In2O3,其中Co∶In∶Zn,Fe∶In∶Zn,Ni∶In∶Zn分别为5∶1∶100,5∶1∶100,3∶1∶100。3 mol/L KOH作矿化剂,温度430℃,填充度35%,反应24 h,制备了In和过渡族金属离子共掺的ZnO晶体。结果表明,掺杂In2O3时,所合成的过渡族金属离子掺杂的ZnO晶体均呈现六角片状晶体,晶体形貌规则,表面光滑,直径为5~10μm。和未掺杂In的晶体相比,掺杂In后,晶体c轴极性生长速度得到明显的控制,a、b轴方向生长速度提高,大面积显露+c{0001}、负极面-c{000}面,另外还显露正锥面+p{101}、负锥面-p{10}。
In this paper,In and TM(transition metal) codoped ZnO crystals were synthesized by hydrothermal method with CoCl2·6H2O,FeCl2·4 H2O,NiCl2·6H2O,In2O3 as precursor(Co∶In∶Zn,Fe∶In∶Zn,Ni∶In∶Zn was 5∶1∶100,5∶1∶100,3∶1∶100 respectively),3 mol/L KOH as mineralizer,the fill factor was 35%,reaction temperature of 430 ℃ and time of 24 h.The results show when doping In2O3,the morphology of TM-ZnO crystal was hexagonal and diameter was 5-10 μm with even morphology and smooth surface.Compared with that without doping In2...