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中文摘要：
本文采用水热法，在ZnO前驱物中添加少量的In2O3，合成了掺In的ZnO晶体。结果显示：生长的掺In的ZnO晶体呈六角片状，大面积显露{0001}面和负极面-c{0001^-}。In掺杂后晶体的形态得到了明显的改变，使c轴极性快速生长趋向得到明显改善。当采用ZnO晶片为籽晶时，通过水热反应在晶片上生长了一层掺In的ZnO薄膜，通过SEM和光学显微观察，所生长的晶体表面光滑平整，双晶衍射摇摆曲线半宽度小于39弧秒，显示具有较高的晶体质量。
英文摘要：
In-doped ZnO crystals were synthesized by hydrothermal method through adding In2O3 to ZnO. The results indicated that the In-doped ZnO had shape of hexagonal slice. The positive polar face ＋ c {0001 } and negative polar -c { 0001 │ was also exposed. The shape of In-doped ZnO was obviously improved, the rate of growth along c-axie was weakened apparently. As the ZnO slice was used as seed crystal, In-doped ZnO film was fabricated on crystal slice by hydrothermal method. SEM and optical microscopic observation showed the growth of the crystal surface is smooth, double-crystal diffraction rocking curve half-width is less than 39 aresec, indicating the synthesized crystal have high quality.
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