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中文摘要：
采用磁控溅射方法在Si衬底上沉积NiCr薄膜，通过金属剥离技术制备不同膜厚的NiCr薄膜电阻．对不同膜厚样品退火前后阻值的测试表明，磁控溅射沉积NiCr薄膜的晶粒较小，退火前样品阻值较大．当退火温度超过350℃后，薄膜中的细小晶粒合并为较大的晶粒，晶粒间界面积减小，电阻率也相应减小；而经过450℃退火5min后，晶粒尺寸趋于饱和，进一步的退火时间对阻值的变化影响不大．
英文摘要：
Ni80Cr20 thin films with different thickness were prepared on Si substrate by magnetron supttering method, and the film resistances were fabricated by lift-off technique. The experimental results showed that the as-deposited grains were small, and therefore the resistance was large. When the annealing temperature exceeded 350 ℃, the small grains merged into a large one, the intercrystalline area decreased, and the resistance decreased drastically. The grain size tended to saturation when the annealing was carried out at 450 ℃ for 5 min, and the influence of annealing time on the resistance can be neglected.
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