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中文摘要：
为了在InP材料中获得精确的浅结扩散和低的接触电阻，同时防止InP表面层分解，提出了一种以Zn膜作扩散源、用快速热处理工艺进行Zn扩散的新方法。实验结果表明，该方法不仅可以获得约5×10^18cm^-3的空穴浓度，而且扩散界面平坦、无尖峰。用SiNx／SiO2和Al2O3图形掩膜制备的p-n结二极管的反向击穿电压分别为28和37V，进一步验证了扩散界面良好的电学特性。
英文摘要：
Zn diffusion in n-InP wafers from Zn film has been investigated using rapid temperature annealing process. The characteristics of Zn-doped InP are analyzed using electrical chemical capacitance-voltage, curve tracer, and microscope. The Zn distribution profile indicates that the net acceptor concentration is about 5 × 10^18 cm^-3. The p-n junction diodes with patterns of SiNx/SiO2 and A1203 fabricated using Zn diffusion have the breakdown voltages of 28 and 37V, respectively. The experimental results prove that Zn diffusion technique developed in this paper can be used to fabricate optoelectronic devices.
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