中文摘要：

采用溶胶-凝胶法在石英玻璃上制备掺锡氧化锌（ZnO：Sn）透明导电薄膜，研究了干燥温度和退火温度对薄膜结晶度、微观结构、光电特性的影响。采用X射线衍射仪（CRD）、扫描电子显微镜（SEM）、紫外一可见光光度计（UV—VIS）和四探针法等分析方法对ZnO：Sn薄膜进行分析表征，结果表明：在300℃温度下干燥10min后，在700℃空气中退火1h制备出的ZnO：Sn薄膜表面平整，具有c轴择优取向，平均透过率达到92％以上，电阻率仅为113．6n-cm。关键词透明氧化物半导体；ZnO薄膜；Sn掺杂；溶胶一凝胶法

英文摘要：

Sn-doped ZnO （ZnO：Sn） thin films were prepared on silica glass substrates by the sol-gel method. The effects of different drying temperatures and annealing temperatures on the crystallinity, structural, optical and electrical properties of the films were investigated. The ZnO：Sn thin films were characterized by X-ray diffraction （XRD）, scanning electron microscope （SEM）, Ultra Violet-visible spectra （UV-VIS） and four-point probe method. The results show that ZnO ： Sn thin films prepared by drying at 300 ℃ for 10 minutes, then annealed in the air at 700 ℃ for 1 hour have the smoother surface, the high-preferential c-axis orientation, the average transmittance of 92 % and the resistivity of 13.6 Q.cm.