中文摘要：

在室温条件下,通过射频磁控溅射法在柔性衬底PET上制备ZnO：Ga（GZO）透明导电薄膜。主要研究了溅射功率对薄膜结构、内应力、光学和电学性能的影响,并对样品进行了相关测试。XRD测试表明GZO薄膜具有六角纤维矿结构的同时具有良好的C轴择优取向生长,但是衍射角出现明显偏移,表明薄膜内部存在较大应力;SEM测试显示薄膜表面晶粒具有良好的均匀均性和致密性,随着溅射功率增加,晶粒尺寸按照一定规律变化。薄膜的平均透过率在85%左右,电阻率最低达到7.1×10^-3Ω·cm。

英文摘要：

Gallium-doped zinc oxide transparent conducting films were deposited on flexible substrate polyethylene terephthalate by radio frequency（RF）magnetron sputtering at room temperature.The influence of sputtering power on the structural properties,internal stress,optical and electrical properties of as-deposited films were researched,and some relative tests were conducted on the samples.The XRD test shows that all the deposited films were polycrystalline with hexagonal structure and a strong preferred c-axis orientation,However,the diffraction angle has an obvious deviation,indicating larger internal stress in films.The SEM test shows that crystalline grains have great uniformity and density;with the increase of sputtering power,crystalline grain size changes regularly.The average transmittance of films is about 85%,and the lowest electrical resistivity is 7.1×10~（-3） ？·cm.