中文摘要：

基于0.18μm互补金属氧化物半导体（CMOS）图像传感器工艺提出一种新型的低暗计数率（Dark Count Rate）单光子雪崩二极管（SPAD）器件.该器件是利用P＋/LNW（Light N-well doping）结检测光子,并通过低浓度的N型扩散圆形保护环抑制边缘击穿,确保其工作在盖格模式.测试结果表明在室温环境下,直径为8μm的SPAD器件,雪崩击穿电压为14.2 V,当过调电压设置为2 V时,暗计数率为260 Hz,具有低的暗计数率特性.

英文摘要：

A novel low dark count rate single-photon avalanche diode （SPAD） device was designed and fabricated with the 0.18 μm CMOS Image Sensor （CIS） technology in this paper. The device is comprised of an effective P ＋/LNW （light N-well doping） junction for photon detecting and a low concentration N-type diffusing circular guard-ring formed by the deep N-well diffusion. The latter prevents premature edge breakdown （PEB） of the junction and ensures it to operate in Geiger mode. The measured results show that the SPAD achieves a low dark count rate （DCR）, and the DCR is 260 Hz at an excess bias voltage of 2V for 8 μm diameter active area structure at room temperature.