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Memory Behaviors Based onITO/Graphene Oxide/Al Structure
  • ISSN号：0256-307X1741-3540
  • 期刊名称：Chinese Physics Letters
  • 时间：2015.6.12
  • 页码：077201/1-4
  • 相关项目：氧化石墨烯基二极管存储器及其存储机理的研究
作者： Xia Xian-Hai|Fan Qu-Li|Xie Ling-Hai|HUANG Wei|
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氧化石墨烯基二极管存储器及其存储机理的研究
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