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Temperature dependence of resistive switching behaviors in resistive random access memory based on g
  • ISSN号：0957-4484
  • 期刊名称：Nanotechnology
  • 时间：2014.5.9
  • 页码：185202/1-185202/7
  • 相关项目：氧化石墨烯基二极管存储器及其存储机理的研究
作者： Yang, Tao|Fan, Quli|Xie, Linghai|Huang, Wei|
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氧化石墨烯基二极管存储器及其存储机理的研究
期刊论文 20 会议论文 2
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