中文摘要：

为了找到并纠正抗辐射晶体管3DK9DRH贮存失效的原因，利用外部检查、电性能测试、检漏、内部水汽检测、开封检查等试验完成了对晶体管3DK9DRH的一种贮存失效分析。结果表明晶体管存在工艺问题，内部未进行水汽控制，加上内部硫元素过高，长期贮存后内部发生了氧化腐蚀反应，从而导致晶体管功能失效。对此建议厂家对晶体管的生产工艺进行检查，对水汽和污染物如硫元素等加以控制，及时剔除有缺陷的晶体管。

英文摘要：

To find the cause of storage failure to radiation-hardened transistor 3DK9DRH and prevent the incident, a storage failure analysis of transistor 3DK9DRH was implemented by visual inspection, electrical performance test, leak de- tection, internal moisture detection and breaking seal inspection. The results show that the failure reasons of long- term stored transistor are incomplete productive technology, that is, the internal water vapor is not controlled and in- ternal sulfur element is too high, which would lead to oxidation corrosion reaction and transistor function failure. A suggestion that the manufacturers should exam the transistor productive technology, and control the water vapor and contaminants such as sulfur strictly is made in this paper. Of cause, the defective transistors should be picked out before being used.