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中文摘要：
采用脉冲激光沉积（PLD）在Pt／Ti／SiO2／Si基片上制备了新型Li0.04（Na0.5K0.5）0.96（Nb0.775Ta0.225）O3无铅压电陶瓷薄膜，分别利用x一射线衍射仪（XRD）和扫描电镜（SEM）研究了该薄膜的晶体结构及表面形貌，分析研究了制备技术和工艺对薄膜晶体结构及表面形貌的影响。研究结果表明：薄膜的热处理温度和氧气压力对所生长的薄膜影响较大；制备Li0.04（Na0.5K0.5）0.96（Nb0.775Ta0.225）O3薄膜的最佳退火温度和氧气压力分别为650℃和30Pa；利用脉冲激光沉积的Li0.04（Na0.5K0.5）0.96（Nb0.775Ta0.225）O3无铅压电陶瓷薄膜具有精细的表面结构。
英文摘要：
A new type of lead-free piezoelectric ceramic films, Li0.04（Na0.5K0.5）0.96（Nb0.775Ta0.225）O3 , has been prepared by pulsed laser deposition technique on Pt/Ti/SiOz/Si substrates. The crystal structure and surface morphology of the films have been studied with X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The effect of fabrication technologies on the crystal structure and surface morphology of the films has been investigated. The results showed that the properties of the Li0.04（Na0.5K0.5）0.96（Nb0.775Ta0.225）O3 films deposited are strongly de- pendent on the substrate temperature and the oxygen pressure of the camber. The annealing temperature of 650 ℃ and the camber oxygen pressure of 30 Pa are found to be optimized parameters for the growth of better textured film. The deposited Li0.04（Na0.5K0.5）0.96（Nb0.775Ta0.225）O3 films by PLD in present work are fine, uniform and dense.
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