做钨的银电影被沉浸终止氢的硅晶片进 2.5 mmol/L 的答案准备[Ag2WO4 ] 在 50 琠潷椠瑮牥慮? 牦捩楴湯瀠慥獫漠 ? 桴 ? 灳 ' 毯茰C郀?潣普物敭 ? 潣牲獥潰摮湩 ? 潴琠敨爠癥牥敳琠慲獮潦浲瑡潩 ? 景吠乩 ? 的 +0.1 mol/L HF ? 湡 ?楔楎?金挠浯潰敮瑮?敲灳'虡N敶祬.?吗??
Tungsten-doped silver films were prepared by immersing hydrogen-terminated silicon wafers into the solution of 2.5 mmol/L [Ag2WO4]+0.1 mol/L HF at 50 ℃. Their growth and composition were characterized with atomic force microscopy and X-ray photoelectron spectroscopy, respectively. The effect of tungstate ions on the deposition of silver was investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) by comparing W-doped Ag film with Ag film. It is found that the molar fraction of tungsten in the deposits is about 2.3% and the O to W molar ratio was about 4.0 and W-doped Ag films have good anti-corrosion in air at 350 ℃. The doping of tungsten cannot change the deposition of silver.