中文摘要：

使用感应耦合等离子体化学气相沉积（Inductively coupled plasma chemical vapor deposition,ICPCVD）方法在GaN上沉积SiOx薄膜,生长参数中采用不同RF功率,研究RF功率对薄膜物理性能和电学性能的影响.结果发现,随着RF功率增大,薄膜应力增大,表面粗糙度减小,薄膜致密度增大.选择最优的RF功率参数,制作了SiOx/nGaN金属-绝缘体-半导体（metal-insulator-semiconductor,MIS）器件,结果得到薄膜漏电流密度在外加偏压为90V时小于1×10^-7A/cm^2,SiOx/n-GaN界面态密度为2.4×10^10eV-1cm-2.表明利用ICPCVD低温沉积的SiOx-GaN界面态密度低,薄膜绝缘性能良好.

英文摘要：

Silicon oxide（ SiOx） films on GaN were synthesized at 75 ℃,using the inductively coupled plasma chemical vapor deposition（ ICPCVD） with different radio-frequency chuck power（ RF power）. The physical and electrical properties of the deposited SiOx thin films were characterized by various methods. It is found that as the RF power increased,the films＇ stress increased while the surface roughness and the film density increased. With optimized RF power,the SiOx/ n-GaN metal-insulator-semiconductor（ MIS） structures were fabricated. The electrical properties of the SiOxfilms were investigated by current density-voltage（ J-V） and capacitance-voltage（ C-V） measurements. The results showthat the leakage current density is lower than 1×10^- 7A /cm2 at 90 V,the minimum interface state density is 2. 4 ×10^10e V- 1cm- 2,indicating good electrical properties of ICPCVD deposited SiOxfilms.