中文摘要：

采用ICPCVD-SiNx薄膜对GaN/A1GaN基紫外探测器进行钝化,从薄膜绝缘特性、钝化效果两方面,对ICPCVD-SiNx、磁控溅射-SiOx、PECVD-SiOx和PECVD-SiNx四种钝化膜进行对比.制作了钝化膜/GaN MIS器件,通过测试MIS器件漏电流密度和薄膜击穿电场的大小表征薄膜绝缘性能,结果表明ICPCVD-SiNx对应的MIS器件的漏电特性最好,外加偏压为100 V时,其漏电流密度保持在1＆#215;10-7 A/cm2以下,薄膜击穿电场大于3.3 MV/cm.采用不同钝化方法制作了p-i-n型AlGaN基紫外探测器,通过计算钝化前后器件暗电流的变化,表征不同钝化方法的钝化效果.结果表明ICPCVD-SiNx钝化的器件,其暗电流比其他钝化方法的器件小近两个数量级,在-5V偏压下暗电流密度为7.52 A/cm2.

英文摘要：

ICPCVD-SiNx was used to passivate GaN/A1GaN ultraviolet photodetectors, the insulativity and passivation effect of ICPCVD-SiNx, magnetron sputtering-SiOx, PECVD-SiOx, PECVD-SiNx films were compared. GaN MIS was fabricated by employing different passivation films, it is shown that the MIS devices passivated by ICPCVD-SiNx film can realize the best insulativity, the leakage current density was lower than 1 × 10^-7 A/cm^2 when the bias applied reached 100 V, the breakdown field was higher than 3.3 MV/cm. p-i-n A1GaN photodetectors were fabricated by using different passivation techniques, it was shown that the detectors passivated by ICPCVD-SiNx film have two orders of magnitude higher dark current decreasement compared with other passivation methods. The dark current is 7.52 A/cm2 when the applied bias is -5 V.