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Cross-Sectional Shape Effects of Gate-All-AroundNanowire Field-Effect Transistors
  • ISSN号：1546-1955
  • 期刊名称：Journal of Computational and Theoretical Nanoscien
  • 时间：0
  • 页码：-
  • 相关项目：基于器件物理的射频石墨烯场效应管集约模型研究
作者： H. Wang, S. Chang, J. He, Q. Huang and G. Wang|
同期刊论文项目
基于器件物理的射频石墨烯场效应管集约模型研究
期刊论文 27 会议论文 2
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