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Band Structure Effects in Extremely Scaled Silicon Nanowire MOSFETs With Different Cross Section Sha
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2015.11
  • 页码：3547-3553
  • 相关项目：基于器件物理的射频石墨烯场效应管集约模型研究
作者： Wang, Hao|Chang, Sheng|He, Jin|Huang, Qijun|
同期刊论文项目
基于器件物理的射频石墨烯场效应管集约模型研究
期刊论文 27 会议论文 2
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