中文摘要：

利用中频直流磁控反应溅射法（MF-DC-MS）在玻璃衬底上制备了掺铝氧化锌（AZO）透明导电薄膜。利用x射线衍射（XRD）、四探针法和分光光度计深入研究了衬底温度对AZO薄膜的结构、电学和光学特性的影响。研究结果表明3h的沉积使AZO薄膜丧失了（002）c轴择优取向。随着衬底温度由210℃升高到270℃，AZO薄膜的电阻率从7.5×10^-3Ω·cm降低到2.5×100^-3Ω·cm。高于270℃后，电阻率又略有升高。电阻率的变化趋势可从薄膜微观结构的角度得到合理解释。随着衬底温度的升高，AZO薄膜的吸收边先发生了蓝移。高于270℃后，又发生了红移。利用Burstein-Moss效应分析了AZO薄膜吸收边的蓝移和红移。该结果和电阻率的结果相印证。

英文摘要：

The aluminum doped zinc oxides films were grown by midfrequency DC magnetron sputtering on glass substrates. The micmstructures of the films were characterized with X-ray diffraction （XRD）,four point probe and spectrophotometer. The influence of the film growth conditions, including substrate temperature, gas pressure, target power, and deposition rate, on microstructures of the Al-doped ZnO films was studied. The results show that the substrate temperature strongly affects the micmstructures and properties of the films. For instance, as the temperature rises from 210℃ to 270℃, the resistivity of the film drops from 77.5×10^-3Ω·cm to 2.5×100^-3Ω·cm, and a blue-shift of the absorption edge shows up. However, at a temperature over 270℃ , an increase of the resistivity and a red shift of the absorption edge can be observed. Possible mechanisms were also tentatively discussed.