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PROTON-IRRADIATION INDUCED DEFECTS IN Te-DOPED GaSb STUDIED BY PHOTOLUMINESCENCE AND POSITRON ANNIHI
  • ISSN号：0217-9849
  • 期刊名称：Modern Physics Letters B
  • 时间：0
  • 页码：2733-2739
  • 语言：英文
  • 相关项目：用高分辨数字式正电子寿命谱研究AlN、ZnO等半导体中的缺陷
作者： KAI ZHOU, HUI LI and ZHU WANG|
同期刊论文项目
用高分辨数字式正电子寿命谱研究AlN、ZnO等半导体中的缺陷
期刊论文 13 会议论文 2
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