中文摘要：

设计了一种适用于深低温环境的微型加热器。使用Ac磁控溅射技术将NiCr（80／20at．％）合金沉积到SiO2／Si基底上，并采用微加工工艺实现薄膜图形化，作为加热器的加热元件。研究了NiCr薄膜的电学性能和晶体结构与退火条件之间的关系。实验表明：在450℃氮气环境下退火30min，可以获得深低温性能优良的NiCr加热器。该加热器在20K时的电阻温度系数（TCR）为80．80×10-6／K。X射线衍射（XRD）分析显示NiCr薄膜在450℃氮气环境下退火后，薄膜的结晶度增大，因此，退火条件对薄膜的电阻率和电阻温度系数有较大的影响。

英文摘要：

A micro-heater used in cryogenic environment is designed. NiCr （80/20 at. % ） thin film is deposited on SiO2/Si substrates by AC magnetron sputtering technique and patterned by micro processing technology as heating component. The electrical properties and crystalstructure of NiCr film is researched. Experiment shows that good performance NiCr heater can be obtained after annealed at 450 ℃ for 30 min in N2. The temperature coefficient of resistance （TCR） of heater is 80.80 ×10-6/K at 20 K. X-ray diffraction （XRD） analysis show crystallinity of the thin film becomes stronger after annealed at 450 ℃ in N2 ambient, so annealing conditions have a significant effect on resistivity and TCR of thin film.