位置：成果数据库 > 期刊 > 期刊详情页
Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal anneal
  • ISSN号：0957-4522
  • 期刊名称：Journal of Materials Science: Materials in Electro
  • 时间：2012.2.2
  • 页码：542-545
  • 相关项目：ZnO基垂直腔面发射激光器制备及其关键科学问题研究
作者： Liu, Yuanda|Xia, Xiaochuan|Liang, Hongwei|Zhang, Hezhi|Bian, Jiming|Liu, Yang|Shen, Rensheng|Luo, Yingmin|Du, Guotong|
同期刊论文项目
ZnO基垂直腔面发射激光器制备及其关键科学问题研究
期刊论文 26 专利 4
同项目期刊论文
Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment
Dominant UV emission from p-MgZnO/n-GaN light emitting diodes
Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED
n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1-xN elec
Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal
Influence of N-2 and O-2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu film
Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mod
Photofacilitated Controllable Growth of ZnO Films Using Photoassisted Metal Organic Chemical Vapor D
Rediscovery of the role of the i-layer in n-ZnO/SiO2/p-GaN through observations from both the ZnO an
High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN he
Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Dopi
SiN插入层对GaN外延膜应力和光学质量的影响(英文)
低温插入层对绿光LED的发光影响
喷淋头高度对InGaN/GaN量子阱生长的影响
衬底弯曲度对GaN基LED芯片性能的影响
MOCVD法生长Ga、P掺杂的ZnO薄膜