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中文摘要：
利用MOCVD技术在蓝宝石衬底上外延生长了具有低温插入层结构的绿光LED，研究了具有插入层结构的LED的发光特性。插入层的引入增加了In在量子阱中的并人，并且引起了波长红移。经过分析，认为是In的相分离和极化场带来的红移，且恶化了器件的性能。
英文摘要：
The green light emitting diode （LED） with an insertion layer between the multiple quantum wells and n- GaN layer was grown on c-plane sapphire substrate by metal organic chemical vapor deposition. The structural and op- tical properties of the LEDs with and without insertion layer were investigated. It is found that the insertion layer can promote the combination of In concentration, and induce an overall red-shift of wavelength. We speculate that the In phase separation and piezoelectric field would be responsible for the wavelength red-shift, the performance of LED de- teriorated either.
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