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Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment
  • ISSN号：0957-4522
  • 期刊名称：Journal of Materials Science: Materials in Electro
  • 时间：2013.9.9
  • 页码：3299-3302
  • 相关项目：ZnO基垂直腔面发射激光器制备及其关键科学问题研究
作者： Song, Shiwei|Shen, Rensheng|Liang, Hongwei|Liu, Yang|Xia, Xiaochuan|Zhang, Kexiong|Yang, Dechao|Wang, Dongsheng|Du, Guotong|
同期刊论文项目
ZnO基垂直腔面发射激光器制备及其关键科学问题研究
期刊论文 26 专利 4
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