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Memory properties of a Ge nanoring MOS device fabricated by pulsed laser deposition
  • ISSN号：0957-4484
  • 期刊名称：Nanotechnology
  • 时间：0
  • 页码：275706-275709
  • 语言：英文
  • 相关项目：II-VI族半导体纳米晶体的掺杂特性研究
作者： Ma, Xiying|
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II-VI族半导体纳米晶体的掺杂特性研究
期刊论文 29 会议论文 2 获奖 6 专利 1 著作 1
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