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Memory Properties of a Ge Nanocrystals MOS Device Fabricated by Pulsed Laser Deposition
  • ISSN号：0946-2171
  • 期刊名称：Applied Physics B-Lasers and Optics
  • 时间：0
  • 页码：589-592
  • 语言：英文
  • 相关项目：II-VI族半导体纳米晶体的掺杂特性研究
作者： Xiying Ma|C. Wang|
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II-VI族半导体纳米晶体的掺杂特性研究
期刊论文 29 会议论文 2 获奖 6 专利 1 著作 1
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