中文摘要：

SiO2作为栅介质已无法满足MOSFET器件高集成度的需求,高k栅介质材料成为当前研究的热点。综述了高k栅介质材料应当满足的各项性能指标和研究意义,总结了La基高k栅介质材料的最新研究进展,以及在改正自身缺点时使用的一些实验方法,指出了有可能成为下一代MOSFET栅介质的几种La基高k材料。La基高k材料的研究为替代SiO2的芯片制造工艺提供优异的候选材料及理论指导,这是一项当务之急且浩大的工程。

英文摘要：

SiO2 will no longer meet the requirements of high integration of MOSFET devices,and high-k materials as gate dielectrics become a research focus.The satisfied various performance indexes and the research significance of high-k gate dielectric materials are described.The latest developments of La-based high-k gate dielectric materials are summarized,and some experimental methods are used to correct the drawbacks of La-based high-k gate dielectric materials.Several La-based high-k materials of the next generation of MOSFET gate dielectrics are predicted.The researches of La-based high-k materials for replacing SiO2 in the chip process provide excellent candidate materials and theoretical guidance,and this is an urgent and vast project.