位置：成果数据库 > 期刊 > 期刊详情页
Memory Properties of Ge quantum dots and rings MOS structure prepared by Pulsed Laser Deposition
  • ISSN号：1742-6588
  • 期刊名称：Journal of Physics: Conference Series
  • 时间：0
  • 页码：012020-012024
  • 语言：英文
  • 相关项目：II-VI族半导体纳米晶体的掺杂特性研究
作者： Xiying Ma|
同期刊论文项目
II-VI族半导体纳米晶体的掺杂特性研究
期刊论文 29 会议论文 2 获奖 6 专利 1 著作 1
同项目期刊论文
SiGe纳米环的制备与电磁特性研究进展
锗/硅量子点形貌随退火温度的变化与电学特性研究
SiGe纳米环状的生长与电磁特性研究进展
热氧化法制备纳米晶体、纳米线
Fabrication of Strong Brightness Water-Soluble ZnS and ZnS: Mn Quantum Dots
Energy states of a single electron in a three-dimensional quantum ring
纳米ZnO薄膜的热蒸发法制备及其光电特性研究
Fabrication of Si3N4 Nanocrystals and Nanowires using PECVD
Study of the P-Type Doping Properties of ZnS Nanocrystals
The Properties of Ge Quantum Rings Deposited by Pulsed Laser Deposition
Fabrication of Ge quantum rings from the droplets by pulsed laser depositio
Ⅱ-Ⅵ族半导体纳米晶体的掺杂研究进展
Si 纳米线及其器件研究进展
Optical properties of ZnO and Mn-doped ZnO nanocrystals by vapor phase transport processes
Fabrication of carbon nano?owers by plasma-enhanced chemical vapor deposition
Fabrication of carbon nanoflowers by plasma-enhanced chemical vapor deposition
The Light Emission properties of ZnS:Mn Nanoparticles
Fabrication of Si3N4 Nanowires using PECVD
碳纳米团族向碳纳米纤维相转变机理研究
Memory Properties of a Ge Nanocrystals MOS Device Fabricated by Pulsed Laser Deposition
Memory properties of a Ge nanoring MOS device fabricated by pulsed laser deposition
Fabrication of silica/zinc oxide core-shell colloidal photonic crystals
Ce(III) salt induced changes of superficial microstructure in freshwater pearls
La基高k栅介质的研究进展
热氧化法制备ZnO纳米晶体、纳米线