中文摘要：

用X射线衍射（XRD）技术和显微Raman散射方法对金属有机化学气相沉积（MOCVD）法生长的六方相InxGa1-xN薄膜样品进行了研究，观察到了相分离现象和LO声子一等离子耦合模（LPP^＋），讨论了InxGa1-xN的A1（LO）模被屏蔽的主要物理机制．同时，对Raman谱中E2和A1（TO）声子模进行了分析和讨论．在InxGa1-xN样品的低温Raman谱中还观察到单电子跃迁产生的Raman散射信号．

英文摘要：

Hexagonal InxGa1-xN film grown by metalorganic chemical vapor deposition （MOCVD） was studied by Micro-Raman scattering and X-ray diffraction. The phase separation was observed in InxGa1-xN, the biaxial stress was measured by both Raman and X-ray diffraction. In Raman spectroscopy, the A1 （LO） mode of InxGa1-xN is absent. Instead, the LO phonon- plasmon coupled mode （LPP＋ ） was observed at about 778 cm^-1. The carrier concentration was determined by the frequency of the coupled mode. The E2 and A1 （TO）modes of InxGa1-xN layer exhibit a down-shift compare to those of GaN layer. At low temperature, the peak induced by electronic transition was observed in Raman spectra of InxGa1-xN.