中文摘要：

报道了以AICl3和Mg3N2为反应物，在500℃条件下，用简易的设备，合成六方相AIN纳米材料．样品的XRD和XPS图谱表明，实验得到的AIN样品是纯的六方相AIN，其中的杂质相含量均小于仪器的探测灵敏度．TEM图表明，AIN样品呈多孔网络状结构，网络的骨架大小在10-20nm之间．对A1N样品的光学性能的研究表明，AIN样品的禁带宽度值约为6．12eV；红外吸收谱以680cml为中心形成一个很宽的红外吸收带；其拉曼散射峰较AIN薄膜和AIN单晶向低波数方向移动．

英文摘要：

Aluminum nitride （AIN） nanocrystals were successfully synthesized from the reaction of AICl3 and Mg3N2 at the temperature of 500 ℃using simple equipments. The XRD and XPS show that the obtained samples are pure hexagonal AIN and the level of impurity in the samples is lower than the resolution limit of the spectrometers. The TEM image shows that the shape of the AIN samples is reticular, and the size of the skeleton of the reticular structure is about 10-20 nm. The optical properties of the AIN samples were also investigated. The results show that its band-gap value is 6.12 eV, there is an intensive and board band centered at 680 cm^-1 in its FT-IR spectrum and its Raman frequencies are lower than that of AIN films and AIN single crystals.