中文摘要：

以三氯化铝和叠氮化钠为原料,用复分解反应制备单晶氮化铝（AlN）纳米线。样品呈灰白色粉末,反应温度为650℃,反应时间为3h,并对该样品进行X射线衍射、透射电镜和选区电子衍射测试分析。结果表明：样品为六方相氮化铝且为表面光滑的长直形圆柱状,直径为50nm左右,长度均在10μm以上,晶格常数分别为a=0.268nm、c=0.498nm。AlN样品性能的研究表明：样品禁带宽度约为6.14eV,并对光致发光谱中各峰的形成原因进行分析。采用气–固生长机理和择优取向原理对单晶纳米线的生长进行解释。

英文摘要：

Single-crystal AlN nanowires were prepared via double decomposition reaction, in which AlCl 3 and NaN 3 were used as raw materials. Samples were grayish white powder with reaction temperature of 650 ℃ and reaction time of 3 h. The AlN nanomaterials were tested by X-ray diffraction, transmission electron microscopy, and selected area electron diffraction. It is indicated that the samples are hexagonal AlN nanowires of long straight cylinders with a smooth surface about 50 nm in diameter and more than 10 μm in length, and its lattice constants are a=0.268 nm, c=0.498 nm. Performance test of the as-prepared samples shows that band-gap is 6.14 eV. The formation cause of each peak of photoluminescence spectra is explained. The growth of nanowires is interpreted by vapor-solid growth mechanism and preferred orientation principle.