中文摘要：

利用气源分子束外延（GSMBE）技术,在InP（100）衬底上生长InAs量子点激光器。有源区包含5层InAs量子点,每层量子点的平均尺寸是2.9 nm和76 nm,面密度在1010cm-2左右,势垒层为InGaAsP。室温下量子点的光致发光中心波长在1.55μm,发光峰半高宽为108 meV。通过化学湿法腐蚀制备双沟道8μm宽脊条激光器,在20℃连续波工作模式下,腔长为0.7 mm的激光器的阈值电流为143 mA（2.5 kA/cm2）,器件的激射中心波长在1.55μm。由于量子点尺寸的非均匀性,在大电流注入,激光器的激射谱展宽。器件单端面最大输出功率为27 mW,功率斜率效率为130 mW/A。

英文摘要：

InAs quantum dot lasers grown by gas-source molecular beam epitaxy （GSMBE） was described. The active region consists of five-stacked dot layers, while each dot layer is formed by 3.0 ML InAs layer, resulting in dot density of 10^10 cm-2, mean dot height of 2.9 nm, and mean base diameter of 76 nm. The center peaks of room temperature photoluminenscence （PL） of InAs QDs is 1.55μm with linewidth of 108 meV. Ridge waveguide QD laser with stripe width of 8 μm was processed. At 20 ℃, the quantum dot laser with stripe length of 0.7 mm lasing at 1.55 μm under continuous wave operation mode and the maximum output power is 27 mW with slope efficiency of 130 mW/A. With increasing injection current, the lasing spectra is just broaden due to the broad size distribution of the QD assembly.