用熔融急冷法制备了系列不同Tm^3+离子掺杂浓度的Ge—Ga—S-CsI硫卤玻璃,测试了样品折射率、吸收光谱以及800nm激光抽运下的近红外及中红外波段荧光光谱特性。用Judd—Ofelt理论计算分析了Tm^3+离子在Ge-Ga—S-CsI硫卤玻璃中的强度参数Ω(i=2,4,6),自发辐射跃迁几率A,荧光分支比β和辐射寿命τrad等光谱参数。讨论T800nm激光抽运下的样品近红外及中红外荧光特性与Tm^3+离子掺杂浓度之间的关系,并用McCumber(Mc)理论和Futchbauer-Ladenburg(FL)公式分别计算了1.8μm和3.8μm处的受激发射截面。
Tm^3+ -doped chalcogenide glasses in Ge-Ga-S-CsI system were prepared and the properties of glasses including density, absorption spectrum, emission spectra and fluorescence life in the near- and mid-infrared spectral region under 800 nm excitation were measured. The optical parameters such as intensity parameter Ωi ( i = 2,4,6), predicted spontaneous A, radiative transition rate fl and lifetime rnd of Tm^3+ in Ge-Ga-S-CsI glasses and so on by means of Judd-Ofelt theory according to absorption spectrum were calculated. The fluorescence spectra were investigated with the different Tm^3+ ion concentration under 800 nm excitation. Also, the emission cross-section at 1.8 μm and 3.8 μm was found using the theory of McCumber and the Futchbauer- Ladenburg equation respectively.